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Countdown to 15 days! The 7th International Carbon Materials Conference - Silicon Carbide Semiconductor Forum, November 1-2, see you in Shanghai!
Background of the conference Forum size: 200 people Forum time: November 1st to November 3rd, 2023 Organizer: DT New Materials Organizer: Ningbo Detai Zhongyan Information Technology Co., Ltd Supported by: Wide bandgap Semiconductor Technology Innovation Alliance, United Scientific Group Supporting media: Carbontech, DT Semiconductor, DT New Materials, Matsu Technology, Silicon Carbide Semiconductor Materials, Semiconductor Devices, Core Master, Fresh Power Supply, Big Semiconductor, Photovoltaic News, Semiconductor Information .
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Gaoyuan Taike Tianrun Semiconductor (Beijing) Technology Co., Ltd Director of Application Testing Center Speech Title: Testing of Silicon Carbide Power Devices: From R&D to Mass Production, From Wafers to Applications Mr. Gao Yuan is currently a member of the Power Electronics Professional Committee and Young Engineer Working Group of the Chinese Electrotechnical Society, an industry mentor of the Third Generation Semiconductor Industry Technology Innovation Strategy Alliance, and an external expert in the field of power devices at Tech. Mainly engaged in key technical research on characteristic testing, evaluation, and application of power semiconductor devices, committed to promoting the education of power semiconductor devices in higher education and promoting the application of advanced power devices in the industrial sector. Published 8 academic papers, granted 4 patents, and published a monograph titled "Silicon Carbide Power Devices: Characteristics, Testing, and Application Technologies", which is included in the "New Technology Series of Power Electronics" and "Key Technology Series of Semiconductors and Integrated Circuits" of the Mechanical Industry Press, and included in the "14th Five Year Plan" national key publications.
Gong Xiaoliang, Director of the Semiconductor Equipment Research Department of the 48th Research Institute of China Electronics TechnologyDr. Gong, Director of the Semiconductor Equipment Research Department at the 48th Research Institute of China Electronics Technology Group Corporation, is a senior technical expert in electrical equipment. He has been engaged in the research and industrialization of key third-generation semiconductor equipment for a long time, with a focus on epitaxial growth equipment technology research. He has led more than 10 major projects such as the National Key R&D Plan and the Top Ten Technology Breakthroughs in Hunan Province, published more than 10 papers, and authorized 6 invention patents, Led the development of two industry standards, and won honors such as Outstanding Individual Contributions to Major Projects by the State owned Assets Supervision and Administration Commission, Leading Talent in Science and Technology Innovation in Hunan Province, CASA Third Generation Semiconductor Outstanding Innovation Youth, First Prize of China Electronics Science and Technology Award, and Top Ten Young Talents in China Electronics Science and Technology. Lei Guangyin, Researcher at Fudan University Deputy Director of the Institute of Wide Band Gap Semiconductor Materials and Devices, Ningbo Research Institute, Fudan University Chief Scientist of Qingchun Semiconductor (Ningbo) Co., Ltd Speech Title: Current Status and miniaturization development trend of silicon carbide power devicesDr. Lei Guangyin served as a research and development engineer at Ford Motor Company in the United States from 2010 to 2018, responsible for the hardware development of hybrid vehicle motor controllers; From 2018 to 2020, worked as an electric power engineering technical expert at Shanghai NIO Automotive Co., Ltd., responsible for the foresight project of new energy vehicle electric drive systems based on silicon carbide power semiconductors. I have been engaged in power semiconductor module packaging and the development of new energy vehicle electric drive systems for a long time, with a focus on the development of new packaging materials in my research field; Power module packaging design, process development, reliability and failure analysis; Development of hybrid and pure electric drive systems, etc. Li Jinxi, Marketing Director of Xiamen Yuntian SemiconductorSpeech Title: From Advanced Packaging to Advanced Microsystem IntegrationGraduated from the Department of Electronics at Huazhong University of Science and Technology in 2006, and worked in customer technical support and marketing at China Resources Shanghua and Kunshan Huatian. I have over ten years of work experience in the semiconductor industry and have a clear understanding of wafer manufacturing, packaging and testing, as well as the module industry. From the perspective of the upstream and downstream of the semiconductor industry chain, as Moore's Law slows down, advanced packaging has played an increasingly important role and has enormous potential for future development. Based on this, in 2018, he founded Xiamen Yuntian Semiconductor with Dr. Yu Daquan, and is currently mainly responsible for Yuntian's market work. Ma Biao, Founder and General Manager of Shanghai Lanxin SemiconductorSpeech Title: Current Status and Challenges in SiC MOSFET DesignMr. Ma Biao graduated from Fudan University with a Master's degree in Microelectronics. I have 16 years of experience in the development of power semiconductor devices, and also serve as the "Process Development Technical Leader" for the 1700V-6500 Ultra High Voltage 1GBT and FRD Product and Process Flat Development Project of Huahong Hongli Semiconductor 02, the "Line Connection Leader" for MOSFET Products at Jita Semiconductor Lingang Factory, and the "Power Chip Leader" for United Automotive Electronics.  Mei Yunhui, Professor and Doctoral Supervisor at Tianjin University of Technology Executive Vice Dean of the School of Electrical Engineering Speech Title: Exploration of Large Scale Low Temperature and Low Voltage Direct Connection Technology for Direct Water Cooling and Heat Dissipation of Silicon Carbide DevicesProfessor Mei Yunhui has been engaged in research on packaging and reliability of power electronic devices for a long time. In recent years, he has led more than 30 enterprise cooperation projects, including national "excellent youth" and Tianjin "outstanding youth" projects, national fund projects, national defense pre research projects, "Insight Action" projects, aviation fund projects, Huawei, NIO Automotive, Huichuan Technology, etc. He has participated in national fund key projects, 863 projects, etc. Served as a director of the China Power Supply Society, deputy director of the Component Committee, deputy director of the Expert Advisory Committee, IEEE Senior Member, editorial board member of the Journal of Power Supply, and deputy chairman of the Tianjin Power Supply Society. More than 140 academic papers have been published, including 100 SCI papers and 27 authorized invention patents. They have won the IEEE CPMT Young Award, the First Prize of the China Power Supply Society Technology Invention Award (First Completion), the First Prize of the China Electrical Engineering Society Technology Invention Award (First Completion), and the First Prize of the Tianjin Technology Invention Award (Second Completion) The Ministry of Education Huo Yingdong Education Fund Youth Science and Technology Award for Higher Education Institutions, the Electrotechnical Chint Technology Award, the IEEE International Power Electronics Annual Conference APEC Best Presentation Award, IEEE ICEPT Outstanding Paper Award, and the "Special Contribution Award" of the National Third Generation Semiconductor Industry Technology Innovation Strategy Alliance (CASA).
Song Qingwen, Vice Dean of Wuhu Research Institute, Xi'an University of Electronic Science and TechnologySong Qingwen, born in Linyi, Shandong Province, holds a doctoral degree and is a professor/doctoral supervisor. He is the Chief of the National Key R&D Program Youth Program, a leading professor of Huashan Scholars, and the head of a provincial-level innovation team. Mainly engaged in research and talent cultivation on physical models, material growth, key processes, and reliability of wide bandgap semiconductor SiC devices and circuits (power chips), and achieved some innovative results in the design and reliability of SiC power devices and circuit structures. For the first time in the world, successfully developed picosecond SiC based DAS devices; Successfully developed SiC high-voltage device irradiation reinforcement technology; Invented various highly reliable new 4H SiC based power MOSFETs; We have broken through the highly stable SiC gold semi contact process and achieved the first 600 ¡æ SiC based ultraviolet detector in the world; Implement the research and product development of devices such as 600V~10kV/2A~200A SiC SBD, PiN, MOSFET, IGBT, etc; In recent years, I have led or participated in more than 20 projects, including the National Key R&D Plan, National Natural Science, and Shaanxi Provincial Key R&D Plan. In recent years, I have worked in IEEE EDL and IEEE Trans Published over 80 academic papers in journals such as ED and IEEE TPEL, and obtained over 50 nationally authorized patents. Wang Dejun, Professor and Doctoral Supervisor at Dalian University of TechnologyWang Dejun is a professor and doctoral supervisor at the School of Control Science and Engineering, Department of Electronic Information and Electrical Engineering. I have a Bachelor's and Master's degree in Semiconductor from Jilin University, and a PhD in Materials Science from Tsinghua University. I have served at Peking University, Nagoya University, and Nara Advanced Science and Technology University. In recent years, I have guided graduate students in solving multiple core and key technical and theoretical problems, published dozens of academic papers in top international academic journals, and trained graduate students who have won multiple doctoral excellent thesis scholarships and national excellent student scholarships, which are highly welcomed in the industry. Professor Wang Dejun has been deeply involved in the field of SiC devices for more than 20 years, leading a team to first solve the problems of gate oxygen defect analysis and defect physical parameter separation, forming a complete solution for SiC MOS device gate oxygen reliability analysis and testing technology. Currently, he has self-developed multiple sets of scientific research equipment, providing strong support for the server component manufacturing industry.
Wang Rong, Researcher at Hangzhou International Science and Technology Innovation Center of Zhejiang University Selected candidates for the Truth Seeking Science and Technology Innovation Scholars Program and the Youth Talent Excellence Program at Zhejiang University Hangzhou Science and Technology Innovation Center Speech Title: Progress in Silicon Carbide Single Crystal Growth and Substrate Processing TechnologyDr. Wang Rong is committed to the doping and defect physics research of semiconductor silicon carbide materials, and has conducted a series of theoretical and experimental studies on defect physics in silicon carbide single crystal growth, substrate wafer processing, and homogeneous epitaxial processes. Published over 60 SCI papers on the physics of wide bandgap semiconductor defects in academic journals such as PR Applied and APL, and served as reviewers for multiple internationally renowned journals. We have 21 authorized national invention patents and 2 US patents, of which 5 have been transferred with a production value exceeding 30 million yuan.Wang Zheng Beijing North Huachuang Microelectronics Equipment Co., Ltd
General Manager of Substrate Materials Industry
Speech Title: Unswervingly Promoting the High Quality Development of Silicon Carbide Industry through Equipment Innovation Mr. Wang Zheng has been engaged in the semiconductor industry for nearly 20 years, covering multiple advanced fields such as integrated circuits, power semiconductors, MEMS, LEDs, and substrate materials. Currently responsible for the semiconductor substrate material industry at North Huachuang, he is one of the earliest senior experts in China to research wide bandgap semiconductor material equipment and process solutions.  Yang Fei, Power Semiconductor Institute, Global Energy Internet Research Institute, State Grid Corporation of China Deputy Chief Engineer and Director of Process Development OfficeYang Fei, Ph.D., Senior Engineer (Professor level), Deputy Chief Engineer and Director of the Process Development Office of the Power Semiconductor Institute of the Global Energy Internet Research Institute of State Grid Corporation of China, is a high-end leading talent in Zhongguancun. Focusing on the research of silicon carbide epitaxial materials and high-voltage power electronic devices, we have established a research and development team for silicon carbide high-voltage devices, including epitaxial materials, device design, device technology and testing. We have undertaken one national 863 project, two national key research and development plan projects, two projects of the Beijing Municipal Science and Technology Commission, and eight science and technology projects of the State Grid Corporation of China. We have developed 1200V, 1700V, and 3300V series silicon carbide diodes and 3300V/600A hybrid modules, We have developed a 1200V/20A silicon carbide MOSFET and demonstrated its application in a 30kW photovoltaic inverter. Currently, we are developing 6.5kV silicon carbide diodes and MOSFETs for the demonstration project of 35kV/5MW flexible substation power electronic transformers, as well as 18kV silicon carbide IGBTs for 24kV converter valve power units. Led the development of two group standards, led the establishment of a 10kV high-voltage silicon carbide device pilot line for the entire process, authorized 16 invention patents, and translated 2 works. Yin Zhipeng, Product Director of Hebei Puxing Electronic Technology Co., LtdSpeech Title: Epitaxial Technology and Development Trends of Silicon Carbide Yin Zhipeng, Ph.D. in Microelectronics and Solid State Electronics from Dalian University of Technology, currently serves as the Product Director of Hebei Puxing Electronic Technology Co., Ltd., engaged in work related to silicon carbide homogeneous epitaxy and product development. Hebei Puxing Electronic Technology Co., Ltd. is a joint-stock company controlled by China Electronics Technology Semiconductor Materials Co., Ltd. Established in November 2000, it is a nationally recognized high-tech and integrated circuit production enterprise dedicated to the epitaxial research and production of high-performance semiconductor materials. The company has passed ISO9001 and TS16949 quality management system certifications, as well as ISO14001 and ISO45001 environmental and occupational health and safety management system certifications. The main products are various specifications and models of silicon based epitaxial wafers, gallium nitride and silicon carbide epitaxial wafers. Customers are all over Chinese Mainland, Hong Kong and Taiwan, as well as the United States, Japan, South Korea, Russia, India and other international markets, enjoying a high reputation in domestic and foreign markets.
 Zhang Shengtao, Technical Director of Harbin Keyou Semiconductor Industry Equipment and Technology Research InstituteSpeech Title: Industrial Development of Keyou 8-inch Silicon Carbide SubstratePh.D. and Assistant Professor at Harbin Institute of Technology, majoring in Chemical Engineering and Technology, with a focus on new energy materials and devices. In 2021, he was awarded the first prize for scientific and technological progress in Heilongjiang Province, and in 2022, he was selected as a scientific and technological innovation talent in Harbin. From April 2018 to present, Director of the R&D Department of Harbin Keyou Semiconductor Industry Equipment and Technology Research Institute Co., Ltd., responsible for research on silicon carbide crystal growth and defect control. Dr. Zhang Shengtao has long been committed to the development of wide bandgap semiconductor silicon carbide equipment, thermal field simulation design, and single crystal defect control research, promoting the industrialization of large-sized domestic silicon carbide materials. He has led or participated in multiple national, provincial, and municipal key projects such as the National Key R&D Plan, the Provincial Major Science and Technology Achievement Transformation Project, the Provincial Natural Science Foundation, the Provincial Head Wild Goose Team Project, and the Municipal Major Science and Technology Special Project. During the research and development process, a series of original achievements have been achieved. Currently, 8 high-level papers in the semiconductor field have been published, including 6 SCI indexed journals, more than 10 authorized patents, 1 national standard participation, and multiple enterprise standards
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